Figure 4: Scanning electron micrograph of a Si-GaN-Si virtual wafer. State-of-the-art wafer diameters are 4” going to 6” for homoepitaxial SiC and 3” for heteroepitaxy GaN on SiC or Si wafers (moving ...

Renesas Electronics announced its Gen 4+ Super GaN platform, featuring 650 V, 30 milliohm gallium nitride devices for ...

Cambridge GaN Devices (CGD), a power chip startup, is trying to reduce the difficulty level with a new family of e-mode GaN power FETs that it claims can be driven like a standard silicon MOSFET.

Renesas has introduced three 650V GaN power transistors, aimed at server power supplies and e-mobility chargers. "Designed ...

GaN on Si HEMTs are good candidates to enter the 600/650V power devices sector but, at the same time, the improvement of silicon SJ MOSFET will keep them on the market and drive towards a ...

Table 2: Characteristics of silicon superjunction MOSFETs and various gate drive implementations of GaN devices, including ICeGaN. In the case of the cascode, only the depletion-type GaN HEMT is ...

To fabricate their devices, Li and co-workers began by using pulsed laser deposition (PLD) to grow a roughly 50 nm-thick film ...

Efficiency tests have been done comparing the company’s earlier 750V GaN transistor and its ‘StackFet’ switch stacks a high-voltage silicon mosfet on top of the 750V GaN transistor (see graph). Using ...

Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ ...

Renesas Electronics says it is doubling down on its commitment to GaN with a move to 200mm wafers as the market heats up.

Efficient Power Conversion (EPC), a developer of enhancement-mode gallium nitride (GaN) power transistors and ICs, has announced that it is making available the EPC2366. 40 V GaN power transistor ...