Just like life’s reality, when the aged leaves the center stage for the younger ones, Silicon is taking the bow. The advent and adoption of Gallium Nitride (GaN) have succeeded in gradually easing out ...
I R (International Rectifier), the first to build GaN (gallium-nitride) devices on silicon, has now introduced GaNpowIR, its first product on a GaN platform. GaN-device structures are not new; using a ...
Power Integrations has announced industry’s first 1,700V GaN transistor – as far as the company can tell. It is integrated within its latest series of InnoMux-branded multi-output fly-back ac-dc ...
A breakthrough in processing gallium nitride (GaN) on a silicon substrate has produced enhancement-mode FETs with high conductivity and hyperfast switching. Its cost structure and fundamental ...
HAVERHILL, Mass.--(BUSINESS WIRE)--For the past five years EPC Space has been delivering and continues to deliver Rad Hard GaN discrete and module power products which offer higher performance and ...
EPC launches EPC2367, a 100 V GaN FET with ultra-low on-resistance EPC launches EPC2367, a 100 V GaN FET with ultra-low 1.2 mΩ RDS(on), superior efficiency, and thermal performance, advancing AI, ...
The first of two GaN MOSFET introductions from International Rectifier can switch up to 5 MHz, deliver up to 30 A output, and have a figure of merit better than their silicon cousins. Tim McDonald, ...
No two technologies have generated more buzz in power semiconductors in recent years than GaN (Gallium Nitride) and SiC (Silicon Carbide). Both these wide band-gap (WBG) semiconductors offer several ...
DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Transphorm GaN on Si HEMT TPH3206PS: Technology Analysis" report to their offering. Transphorm's TPH3206PS transistor ...
Intel and Macom are leading the GaN-on-Si patent landscape for RF electronics applications, according to Yole Developpement. Intel’s RF GaN-on-Si patent portfolio mainly relates to III-N transistors ...
Even before Weixiao Huang received his doctorate, his new transistor captured the attention of some of the biggest American and Japanese automobile companies. The 2008 graduate's invention could ...
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