Why these are necessary to bridge rising energy demand and a net-zero economy.

For this type of power supply, GaN-based, auxiliary-less primary-side regulation eliminates the need for the auxiliary winding and its related components. It also takes over sensing and isolation ...

GaN power semiconductors, Infineon highlights that gallium nitride will be a game-changing semiconductor material ...

InnoMux is the company’s multi-output flyback dc-dc architecture and it has sized its first 1.7kV GaN transitor product for outputs up to 100W, making it suitable for industrial auxiliary power ...

ROHM has entered a strategic partnership with Taiwan Semiconductor Manufacturing Company (TSMC) to develop and mass-produce gallium nitride (GaN) power devices for the electric vehicle (EV) market.

Navitas Semiconductor,. which makes the GaNFast GaN and GeneSiC SiC power semiconductors, has announced that both ...

SiC and GaN advances used improved device structures and higher levels of integration to support higher voltages and power densities while reducing solution cost. Meanwhile, ...

Navitas’ GaNFast power ICs enable high-frequency, high-efficiency power conversion, achieving 3x more power and 3x faster charging in half the size and weight compared to prior designs with legacy ...

Power Integrations Inc (POWI) reports an 18% revenue increase, driven by industrial growth and GaN technology advancements, despite challenges in consumer and communications sectors.