Built on a wide-bandgap GaN HEMT process, Teledyne’s TDSW84230EP reflective SPDT switch covers 30 MHz to 5 GHz, handling 20 W of continuous power. It is intended to replace PIN diode-based RF switches ...
Developed using a wide-bandgap GaN High Electron Mobility Transistor (HEMT) process, this switch offers a very high breakdown voltage and high saturation current capabilities and is available in a ...
MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP. This switch offers high peak power ...
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