Sponsored by Texas Instruments: The characteristics of GaN FETs are simply too good not to make the “switch” from silicon for high-power, high-density applications.

Renesas launches the Gen IV Plus platform with three new high-voltage 650-V GaN FETs for AI data centers and server power ...

Smart High-Side Power Switch. Recently I came across several Smart High-Side NMOS-Power Switch devices with integrated charge pump and CMOS compatible input. So, the purpose of this session is to take ...

Power Integrations unveils HiperPFS-5, a highly-efficient Quasi-Resonant PFC IC with a 750 V GaN switch; for compact power-factor power supplies.

The TDSW84230EP SPDT GaN reflective switch leverages monolithic microwave integrated circuit (MMIC) design techniques and supports a high 20 watts CW power handling, operating from 30 MHz to 5 GHz.

GaN-on-Si transistors switch about 10 times faster than mosfets and 100 times faster than IGBTs. The applications that first took full advantage of GaN’s high speed switching ability at volume were RF ...

The TDSW84230EP SPDT GaN reflective switch leverages monolithic microwave integrated circuit (MMIC) design techniques and supports a high 20 watts CW power handling, operating from 30 MHz to 5 GHz. It ...

Researchers have developed a series of high-performance, GaN-based CMOS logic circuits, which all display the desired “CMOS-like” characteristics. They project that these circuits could cut ...

The half-bridge IC targets fast-charging power adapters for smart phones and notebooks. It teams such building blocks as gate drivers and level-shifting circuits with 650-V high-side and low-side ...

If you need a common ground between the input power supply and another circuit, you’re better off with a high-side switch. I like to use a ‘backwards’ N-channel then the N-channel version of ...

Power gallium-nitride (GaN) FETs have been available for several years now, but some engineers have been slow to adopt them in power equipment despite their superior characteristics. Getting ...