Power gallium-nitride (GaN) FETs have been available for several years now, but some engineers have been slow to adopt them in power equipment despite their superior characteristics. Getting ...
GaN switches promise higher efficiency and higher power density in SMPS. This article discusses the readiness of this technology and its challenges, and provides an outlook on being a replacement for ...
To achieve high power densities, hybrid inductor-capacitor switching converters are used. These hybrid inductor-capacitor switches prevent transient inrush currents, which usually cause loss in the ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and a global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced ...
The next generation of 650 and 600-V gallium nitride (GaN) field-effect transistors (FETs) by Texas Instruments will be a key factor for automotive and industrial applications. These new GaN FET ...
Think of an application for SiC power electronics and you’ll probably think of electric vehicles (EVs). After all, it’s the battery-powered automobile that’s driving the growth in sales of SiC MOSFETs ...
Navitas unveils new 100 V GaN FETs, alongside 650 V GaN and high voltage SiC devices, purpose-built for NVIDIA’s 800 VDC AI factory architecture, delivering breakthrough efficiency, power density, and ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results