Power gallium-nitride (GaN) FETs have been available for several years now, but some engineers have been slow to adopt them in power equipment despite their superior characteristics. Getting ...
Silicon MOSFET power transistors have been a mainstay of power-supply design for years. And while they’re still widely used, gallium-nitride (GaN) transistors are gradually replacing MOSFETs in some ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm Inc. (OTCQB: TGAN)—a pioneer in the development and manufacturing of high reliability, high performance gallium nitride (GaN) power semiconductors—today ...
To achieve high power densities, hybrid inductor-capacitor switching converters are used. These hybrid inductor-capacitor switches prevent transient inrush currents, which usually cause loss in the ...
The next generation of 650 and 600-V gallium nitride (GaN) field-effect transistors (FETs) by Texas Instruments will be a key factor for automotive and industrial applications. These new GaN FET ...
Building on decades of power-management innovation, Texas Instruments today announced the availability of 600-V gallium nitride 70-mΩ field-effect transistor power-stage engineering samples, making TI ...
Navitas unveils new 100 V GaN FETs, alongside 650 V GaN and high voltage SiC devices, purpose-built for NVIDIA’s 800 VDC AI factory architecture, delivering breakthrough efficiency, power density, and ...
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