Electronic Design

Trading Si LDMOS for GaN in Switch-Mode Power Circuits

Power gallium-nitride (GaN) FETs have been available for several years now, but some engineers have been slow to adopt them in power equipment despite their superior characteristics. Getting ...
Electronic Design

GaN FETs Redefine Power-Circuit Designs

Silicon MOSFET power transistors have been a mainstay of power-supply design for years. And while they’re still widely used, gallium-nitride (GaN) transistors are gradually replacing MOSFETs in some ...
Business Wire

Transphorm to Demonstrate 99% Efficiency Power Switching with a 1200 Volt GaN Power Transistor at ISPSD 2022

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today ...
Business Wire

Transphorm Wins ARPA-E Contract for Novel Four Quadrant GaN Switches with Bidirectional Current and Voltage Control

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and a global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced ...
EDN

GaN FET Switches with N-Phase and Split-Phase Clocking in a 1:5 CW Converter

To achieve high power densities, hybrid inductor-capacitor switching converters are used. These hybrid inductor-capacitor switches prevent transient inrush currents, which usually cause loss in the ...
New Electronics

Renesas unveils new GaN FETs for high-density power conversion

Renesas Electronics has introduced three new high-voltage 650V GaN FETs for AI data centres and server power supply systems. High-voltage 650V GaN FETs Credit: Renesas These GaN FETs are suitable for ...
EDN

High Power with SiC and GaN

Power electronics will evolve in the coming years, especially for components, because WBG semiconductor technologies are becoming increasingly popular. High operating temperatures, voltage, and ...
Automation World

Revolutionize High-Performance Power Conversion With TI's 600-V GaN FET Power Stage

Building on decades of power-management innovation, Texas Instruments today announced the availability of 600-V gallium nitride 70-mΩ field-effect transistor power-stage engineering samples, making TI ...
Electronic Specifier

Navitas powers NVIDIA’s 800V ‘AI factory’ shift with new GaN and SiC devices

Navitas Semiconductor has announced a new range of GaN and SiC power devices designed to support NVIDIA’s 800VDC data centre ...
Investing.com South Africa

Power Integrations stock soars after detailing GaN tech for AI data centers

According to the white paper, Power Integrations’ industry-first 1250 V PowiGaN HEMTs deliver greater power density and ...
Semiconductor Engineering

GaN ICs Wanted for Power, EV Markets

Circuits built with discrete GaN components may get the job done, but fully integrated GaN circuits remain the ultimate goal because they would offer many of the same advantages as integrated silicon ...
EurekAlert!

GaN-based CMOS circuits make power integrated systems more efficient

In recent years, gallium nitride (GaN) has emerged as a compelling candidate to complement the silicon material used in wireless communication and power conversion applications. Benefits of GaN ...