Silicon MOSFET power transistors have been a mainstay of power-supply design for years. And while they’re still widely used, gallium-nitride (GaN) transistors are gradually replacing MOSFETs in ...

Smart High-Side Power Switch. Recently I came across several Smart High-Side NMOS-Power Switch devices with integrated charge pump and CMOS compatible input. So, the purpose of this session is to take ...

Power Integrations unveils HiperPFS-5, a highly-efficient Quasi-Resonant PFC IC with a 750 V GaN switch; for compact power-factor power supplies.

Sponsored by Texas Instruments: The characteristics of GaN FETs are simply too good not to make the “switch” from silicon for high-power, high-density applications.

The TDSW84230EP SPDT GaN reflective switch leverages monolithic microwave integrated circuit (MMIC) design techniques and supports a high 20 watts CW power handling, operating from 30 MHz to 5 GHz.

The TDSW84230EP SPDT GaN reflective switch leverages monolithic microwave integrated circuit (MMIC) design techniques and supports a high 20 watts CW power handling, operating from 30 MHz to 5 GHz. It ...

GaN-on-Si transistors switch about 10 times faster than mosfets and 100 times faster than IGBTs. The applications that first took full advantage of GaN’s high speed switching ability at volume were RF ...

The GaN power semiconductor is about 1/10 of the size of the Si mosfet. Figure 1 shows that the GaN power semiconductor occupies roughly 5-10% of the board space on one side of the design. If the ...

Researchers have developed a series of high-performance, GaN-based CMOS logic circuits, which all display the desired “CMOS-like” characteristics. They project that these circuits could cut ...

The half-bridge IC targets fast-charging power adapters for smart phones and notebooks. It teams such building blocks as gate drivers and level-shifting circuits with 650-V high-side and low-side ...

This circuit uses silicon carbide FET instead of silicon FET to stably provide high output while minimizing heat generation. In addition, RA280 applies a 2.5 kW power factor correction (PFC) circuit ...

The TDSW84230EP SPDT GaN reflective switch leverages monolithic microwave integrated circuit (MMIC) design techniques and supports a high 20 watts CW power handling, operating from 30 MHz to 5 GHz.