The PE-100 Convertible plasma system incorporates reactive ion etching and isotropic etching/cleaning technologies into a stand-alone benchtop system. The all aluminum chamber has over 240 in. 2 of ...
A large-scale (4-inch), highly uniform, and defect-free plasma etching technology, which will likely become the foundation of the industrial supply of molybdenum disulfide (MoSâ‚‚), a next-generation ...
In a fin-type or nanosheet field effect transistor (FET) of a logic semiconductor device, it has been proposed to use metal gate materials, for examples, metal carbides (TiC, TiAlC) and metal nitrides ...
To store ever more data in electronic devices of the same size, the manufacturing processes for these devices need to be studied in greater detail. By investigating new approaches to making digital ...
The plasma generator inductor is located outside the process chamber and is isolated from it by a wall made of alumina ceramics, on which zirconium oxide was deposited. To minimize the erosion of the ...
As the world's number one foundry, TSMC has a whole lot of work to do if it hopes to remain in that position. We have barely seen chips that use the 7nm process and now, the company has already gotten ...
Researchers combined low-temperature plasma processing with machine learning to synthesize and etch 6-inch MoS2 and WS2 ...
What is Reactive Ion Etching (RIE)? Reactive Ion Etching (RIE) is a dry etching technique widely used in the fabrication of micro- and nanodevices. It combines the chemical reactivity of reactive ...
Achieves Damage-Free Atomic-Level Etching with a Wide Range of Optional Functions TOKYO--(BUSINESS WIRE)--Hitachi High-Technologies Corporation (TSE: 8036) (Hitachi High-Tech) announced the ...