Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates single-stage power conversion.

If your devices aren’t charging fast enough, it might be due to the wall plug (also known as a power adapter) you’re using.

Navitas Semiconductor has announced the world’s first production-released 650 V bi-directional GaNFast ICs and high-speed isolated gate-drivers.

ROHM Semiconductor U.S.A., LLC, will participate in Applied Power Electronics Conference (APEC) 2025, the premier power ...

According to the DCF valuation, Wolfspeed will not survive its restructuring process, unless it can reach profitability ...

High Electron Mobility Transistor Market Expected to Reach $9.3 Billion by 2031 - Allied Market Research David Correa Allied Market Research + 1800-792-5285 email us here Visit us on social media: ...

China’s economy is holding strong, even as Donald Trump reignites his trade war. In his first months back in office, Trump raised tariffs twice, targeting ...

Innovative AI-driven technology brand TECNO caught the eye on day 2 of MWC Barcelona 2025 at its TECNO AI Ecosystem Product ...

Most famously, this is the area where King Saul fell on his spear rather than face capture by the Philistines. His sons ...

Tiger Group and GESemi are now accepting offers for advanced equipment used to produce high-efficiency, gallium arsenide ...

J ERUSALEM — Israel’s first lady, Michal Herzog, renewed her call for Hamas terrorists to be held accountable for the sexual ...