Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...
A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates single-stage power conversion.
ROHM's EcoGaN Series of 650V GaN HEMTs in the TOLL Package Adopted for Murata's AI Server Power Supplies TOLL package 650V ...
Gallium-nitride (GaN) power devices are becoming one of the core building blocks in LiDAR sensors thanks to their ultra-fast ...
Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...
ROHM has reported that the EcoGaN series of 650V GaN HEMTs in the TOLL package has been adopted for AI server power supplies by Murata Power Solutions. Integrating ROHM's GaN HEMTs, which combine ...
Rohm has announced that the EcoGaN series of 650V GaN HEMTs in the TOLL package has been adopted for AI server power supplies ...
The ultimate power semiconductor switch (transistor) can block voltage and allow current flow in two directions, with the highest efficiency. Navitas’ leadership in GaN innovation has delivered this ...
A power supply unit with plenty of power plus various connections: Belkin's new GaN dock is portable and particularly ...
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