A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates single-stage power conversion.

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Gallium-nitride (GaN) power devices are becoming one of the core building blocks in LiDAR sensors thanks to their ultra-fast ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

Rohm has announced that the EcoGaN series of 650V GaN HEMTs in the TOLL package has been adopted for AI server power supplies ...

ROHM has reported that the EcoGaN series of 650V GaN HEMTs in the TOLL package has been adopted for AI server power supplies by Murata Power Solutions. Integrating ROHM's GaN HEMTs, which combine ...

ROHM's EcoGaN ROHM’s brand name for GaN devices that contribute to energy conservation and miniaturization by maximizing GaN characteristics to achieve lower application power consumption, smaller ...

A power supply unit with plenty of power plus various connections: Belkin's new GaN dock is portable and particularly ...

Belkin today announced the launch of a range of new products, including updated power banks, over-ear headphones, and a GaN ...