900V GaN FETs are here. Their superior reliability allows them to handle 1000V transient voltage and 900V DC link with reduced lifetime. This paper is to demonstrate 900V 50m Ω GaN FETs in a 300 kHz, ...

Rohm has introduced the BM6GD11BFJ-LB, an isolated gate driver optimized for 600-V-class GaN HEMTs in industrial equipment ...

The design and measured performance of wideband, high power GaN SPDT and SP3T MMIC switches in low-cost overmolded plastic package is presented. The switches operate in the 0.15-2.8 GHz band with ...