Since the acquisition of Transphorm in 2024, Renesas has made gallium nitride (GaN) central to its power semiconductor strategy, complementing its strong position in MOSFETs. A key area of focus is ...

The design and measured performance of wideband, high power GaN SPDT and SP3T MMIC switches in low-cost overmolded plastic package is presented. The switches operate in the 0.15-2.8 GHz band with ...

900V GaN FETs are here. Their superior reliability allows them to handle 1000V transient voltage and 900V DC link with reduced lifetime. This paper is to demonstrate 900V 50m Ω GaN FETs in a 300 kHz, ...

Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply ...

EPC Space has announced the EPC7030MSH, a radiation-hardened 300-V GaN FET for high-voltage, high-power space applications.

Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the ...

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Renesas Electronics announced its Gen 4+ Super GaN platform, featuring 650 V, 30 milliohm gallium nitride devices for ...

Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

Mini-Circuits Global Product Marketing Manager for Product Line Test Solutions and High-Power Amplifiers, Angelo Andres, commented: “Our work with Menlo Micro’s Ideal Switch technology has ...