WBG materials, such as SiC and GaN, are central to this progress, providing the necessary performance characteristics to meet the demands of next-generation electronics while enabling more compact and ...

GaNSafe is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control.

Power Integrations has announced industry’s first 1,700V GaN transistor – as far as the company can tell. It is integrated within its latest series of InnoMux-branded multi-output fly-back ac-dc ...

Broadband high-power GaN MMIC switch has been successfully developed. The switch is based on stacked-FET circuits. By employing the configuration, high-power and low-loss performances can be achieved ...

In this article, I will examine an advanced control method used inside a 5-kW power factor corrector (PFC) for a server. The design uses high-performance GaN FETs to operate the power supplies at the ...

The soft turn-off function is used to limit the voltage spike generated due to high stray inductance change. The R3 resistor along with an active MOSFET switch implements the same. When the fault ...

Leveraging a GaN FET for industrial applications Each Gallium Nitride power switch must be paired with an appropriate gate driver; otherwise, you may experience a pop and puff of smoke when testing at ...

Innoscience has released an improved bi-directional GaN transistor that can replace back-to-back silicon mosfets in high-side switching. Innoscience has released an improved bi-directional GaN ...

Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications.

Leveraging a GaN FET for industrial applications Each Gallium Nitride power switch must be paired with an appropriate gate driver; otherwise, you may experience a pop and puff of smoke when testing at ...

Circuits built with discrete GaN components may get the job done, but fully integrated GaN circuits remain the ultimate goal because they would offer many of the same advantages as integrated silicon ...