900V GaN FETs are here. Their superior reliability allows them to handle 1000V transient voltage and 900V DC link with reduced lifetime. This paper is to demonstrate 900V 50m Ω GaN FETs in a 300 kHz, ...

Abstract: Designing a monolithic circuit around a GaN/Si High electron mobility power transistor requires accurate characterization and device modeling. The characterization aims to provide adequate ...