900V GaN FETs are here. Their superior reliability allows them to handle 1000V transient voltage and 900V DC link with reduced lifetime. This paper is to demonstrate 900V 50m Ω GaN FETs in a 300 kHz, ...

Rohm has introduced the BM6GD11BFJ-LB, an isolated gate driver optimized for 600-V-class GaN HEMTs in industrial equipment ...

The design and measured performance of wideband, high power GaN SPDT and SP3T MMIC switches in low-cost overmolded plastic package is presented. The switches operate in the 0.15-2.8 GHz band with ...

Compact, high-efficiency module will enhance installation ease and power efficiency Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a world’s first compact ...

Enhancement-Mode GaN FETs (eGAN FETs) [01:15]: EPC has developed eGaN FETs that operate similarly to power MOSFETs but offer significantly better performance (around 10X better) [01:23].

Approximately 10 IP collaborations (patent co-filings) were recorded, most partnerships formed between industry and academic organisations. For instance, Safran published a patent application with ...

EPC brings GaN power to medium-voltage motor drives Wednesday 11th June 2025 Three-phase motor drive inverter is optimised for 96–150 V battery applications Efficient Power Conversion (EPC) has ...

By using the ideal diode complementary representation it is possible to derive the complementary models for each state of an ideal electronic switch or, in another hand, it is possible to represent an ...